DescriptionThe HE8050-D belongs to the HE8050 series. It is a kind of low voltage high current small NPN silicon transistor. It is designed for Class B push-pull 2W audio amplifier for portable radio and general applications. It is available in the TO-92 package. There are some features of HE8050...
HE8050-D: DescriptionThe HE8050-D belongs to the HE8050 series. It is a kind of low voltage high current small NPN silicon transistor. It is designed for Class B push-pull 2W audio amplifier for portable radi...
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The HE8050-D belongs to the HE8050 series. It is a kind of low voltage high current small NPN silicon transistor. It is designed for Class B push-pull 2W audio amplifier for portable radio and general applications. It is available in the TO-92 package.
There are some features of HE8050-D as follows. (1) collector current up to 1.5 A; (2) collector-emitter voltage up to 25 V; (3) complementary to UTC HE8550.
The following is the description about its absolute maximum ratings at TA is 25 . (1): storage temperature is from -65 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 1 W when TA is 25 ; (3): collector to base voltage(VCBO) is 40 V and collector to emitter voltage(VCEO) is 25 V,emitter to base voltage(VEBO) is 6 V; (4): IC collector current is 1 A; (5): the minimum BVCBO is 40 V when IC is 100 A and IE is 0; (6): the minimum BVCEO is 25 V when IC is 2 mA and IB is 0,the minimum BVEBO is 6 V when IE is 100 A and IC is 0; (7): the maximum IEBO is 100 nA when VEB is 6 V and IC is 0,the ICBO is 100 nA at VCE is 35 V and IE is 0; (8): the maximum VCE(sat) is 0.5 V,at the condition of IC is 800 mA and IB is 80 mA; (9): the minimum fT is 100 MHz when VCE is 10 V,IC is 50 mA.If you want to know more information about the HE8050-D,please download the datasheet at www.seekic.com.