HD155121F

Features:

Receiver(Rx)
`  Low Noise Amplifier (LNA) bias circuit
`  First mixer
`  IF amplifier and second mixer
`  Programmable Gain Amplifier (PGA)
`  IQ demodulator with 90 degree phase splitter
Transmitter(Tx)
`  IQ modulator with 90 degree phase splitter
`  Offset PLL
`  Down converter
`  Phase comparator
`  TXVCO driver
Others
`  IF dividers
`  Power saving control circuit
`  IFVCO
`  Highly integrated RF processing for hand-portables
`  Operating supply voltage
`  VCC : 2.7 to 3.6 V
`  Phase comparator and TXVCO driver circuit : 2.7 to 5.25 V
`  Current consumption
`  Rx mode (GSM) : 53 mA + LNA current
`  Rx mode (PCN) : 52 mA + LNA current
`  Tx mode (GSM) : 36 mA
`  Tx mode (PCN) : 37 mA
`  Idle mode :1 mA
`  Operating temperature : 20 to +75 degree
`  LQFP 48pin SMD (Low Profile Quad Flat Package)
`  Wide operating frequencies
`  Rx RF GSM : 925 - 960 MHz
`  PCN : 1805 - 1880 MHz
`  1st IF : 225 MHz
`  2nd IF : 45 MHz
`  Tx RF GSM : 880 - 915 MHz
`  PCN : 1710 - 1785 MHz
`  IF GSM : 270 MHz
`  PCN : 135 MHz
`  Offset PLL architecture for Transmitter
`  High dynamic range Programmable Gain Amplifier (PGA)


Pinout




Specifications

Item	Symbol	Ratings	Unit
Power supply voltage (VCC)	VCC	0.3 to +4.0	V
Power supply voltage (VCCCOMP)	VCCCOMP	0.3 to +5.5	V
Pin voltage	VT	0.3 to VCC + 0.3 (6.0 Max)	V
Maximum power dissipation	PT	400	mW
Operating temperature	Topr	20 to +85	°C
Storage temperature	Tstg	55 to +125	°C

Description

The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier, and an IQ demodulator for the receiver, and an IQ modulator and offset PLL for the transmitter. Also, on chip are dividers for the phase splitter. Moreover the HD155121F includes control circuits to implement power saving modes. These functions can operate down to 2.7 V and are housed in a 48-pin LQFP SMD package.

Hence the HD155121F can form a small size transceiver handset for dual band by adding a dual PLL frequency synthesizer IC, power amplifiers and some external components.

The HD155121F is fabricated using a 0.6 mm double-polysilicon Bi-CMOS process.