HD1530FX

Transistors Switching (Resistor Biased) HI VLT NPN PWR TRANS HI DEF

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HD1530FX Picture
SeekIC No. : 00224156 Detail

HD1530FX: Transistors Switching (Resistor Biased) HI VLT NPN PWR TRANS HI DEF

floor Price/Ceiling Price

Part Number:
HD1530FX
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Mounting Style : Through Hole Package / Case : ISOWATT218FX-3
Collector- Emitter Voltage VCEO Max : 700 V Continuous Collector Current : 26 A
Power Dissipation : 70 W Maximum Operating Temperature : + 150 C
Packaging : Tube    

Description

Typical Input Resistor :
Typical Resistor Ratio :
Maximum Operating Frequency :
Peak DC Collector Current :
Transistor Polarity : NPN
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 700 V
Power Dissipation : 70 W
Package / Case : ISOWATT218FX-3
Continuous Collector Current : 26 A


Features:

STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1
WIDER RANGE OF OPTIMUM DRIVE CONDITIONS
LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION
FULLY INSULATED POWER PACKAGE WHICH IS U.L COMPLIANT



Application

HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV, AND HIGH -END MONITORS


Specifications

Symbol

Parameter

Value
Unit
VCES Collector-Emitter Voltage (VBE = 0)
1500
V
VCEO Collector-Emitter Voltage (IB = 0)
700
V
VEBO Emitte-Base Voltage (IC = 0)
10
V
IC Collector Current
26
A
ICM Collector Peak Current (tP < 5ms)
40
A
IB Base Current
10
A
IBM Base Peak Current (tP < 5ms)
20
A
PTOT Total dissipation at Tc = 25°C
70
W
Vins Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
2500
V
TSTG Storage Temperature
-65 to 150
°C
TJ Max. Operating Junction Temperature
150
°C



Description

The HD1530FX uses a Diffused Collector in Planar technology which adopts "Enhanced High Voltage Structure" (EHVS1) that was developed to fit High-Definition CRT displays.

The HD1530FX series features improved silicon efficiency, bringing updated performance to Horizontal Deflection output stages.




Parameters:

Technical/Catalog InformationHD1530FX
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)700V
Current - Collector (Ic) (Max)26A
Power - Max70W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic2V @ 3.25A, 13A
Frequency - Transition-
Current - Collector Cutoff (Max)2mA
Mounting TypeThrough Hole
Package / CaseISOWATT218FX
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HD1530FX
HD1530FX



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