HCT7000MTXV

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 200mA
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: -
Supplier Device Package: -
Packaging: Bulk
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds: 60pF @ 25V
Vgs(th) (Max) @ Id: 3V @ 1mA
Manufacturer: TT Electronics/Optek Technology
Package / Case: 3.18mm x 2.67mm x 1.37mm


Features:

`200mA I<sub>D</sub>
`Ultra small surface mount package
`R<sub>DS(ON)</sub> < 5
`Pin-out compatible with most SOT23 MOSFETS


Specifications

Drain-Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 60 V
Gate-Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 V
Drain Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Power Dis sipation (T_A = 25) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Power Dis sipation (T_S⁽¹⁾ = 25) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW(2)
Operating and Stor age Tem perature . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150
Ther mal Re sistance R _JC . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 100/W
Ther mal Re sistance R _JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583/W
Notes:
(1) T_S = Substrate temperature that the chip carrier is mounted on.
(2) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measurable as an outgoing test.


Description

The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors built in SOT23 plastic packages.

The HCT7000M is available processed to TX and TXV levels per MIL-PRF- 19500. Order HCT7000MTX or HCT7000MTXV. Typical screening and lot acceptance tests are provided on page 13-4. TX and TXV products receive a VGS HTRB at 24 V for 48 hrs. at 150 and a VDS HTRB at 48 V for 260 hrs. at 150 .