HCT700

Input Type :
Maximum Collector Emitter Voltage :
Maximum Collector Emitter Saturation Voltage :
Isolation Voltage :
Current Transfer Ratio :
Maximum Forward Diode Voltage :
Maximum Collector Current :
Maximum Power Dissipation :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
Packaging : Tray


Features:

• SILICON PLANAR EPITAXIAL NPN /PNP TRANSISTORS
• HERMETIC CERAMIC SURFACE MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING


Specifications

(Tcase = 25°C unless otherwise stated)		NPN	PNP
VCBO VCEO VEBO IC PD PD TJ , Tstg TL TL	Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Continuous Collector Current Power Dissipation @ Tamb = 25°C Power Dissipation @ Tsubstrate = 25°C Derate above 25°C NPN to PNP Isolation Voltage Operating and Storage Temperature Range Soldering temperature (Vapour phase reflow for 30 sec) Soldering temperature (Heated collet for 5 sec)	75 50 6.0 800mA	60 60 5.0 600mA
		0.4W 2.0W 11.4mW / °C 500V 65 to +200°C 215°C 260°C

Description

Hermetically sealed surface mount complementary transistor pair. The HCT700 transistor die have similar electrical characteristics to the 2N2222A on the NPN side and the 2N2907A on the PNP side.

The HCT700 is ideal for high reliability and space applications requiring small size and low weight devices.