Features: ` MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 125ns (Typ.) at 10V` INDIVIDUAL INHIBIT CONTROLS` QUIESCENT CURRENT SPECIFIED UP TO 20V` STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS`5V, 10V AND 15V PARAMETRIC RATINGS` INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25` 100% TEST...
HCF4085B: Features: ` MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 125ns (Typ.) at 10V` INDIVIDUAL INHIBIT CONTROLS` QUIESCENT CURRENT SPECIFIED UP TO 20V` STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS`5V, 10...
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Symbol |
Parameter |
Value |
Unit |
VDD |
Supply Voltage |
-0.5 to +22 |
V |
VI |
DC Input Voltage |
-0.5 to VDD + 0.5 |
V |
II |
DC Input Current |
± 10 |
mA |
PD |
Power Dissipation per Package |
200 |
mW |
Power Dissipation per Output Transistor |
100 |
mW | |
Top |
Operating Temperature |
-55 to +125 |
|
Tstg |
Storage Temperature |
-65 to +150 |
HCF4085B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.
HCF4085B contains a pair of AND-OR INVERT gates, each consisting of two 2-input AND gates driving a 3-input NOR gate. Individual inhibit controls are provided for both A-O-I gates.