HCF4001B

Features:

·PROPAGATION DELAY TIME: t_PD = 50ns (TYP.) at V_DD = 10V C_L = 50pF
·BUFFERED INPUTS AND OUTPUTS
·STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
·QUIESCENT CURRENT SPECIFIED UP TO 20V
·5V, 10V AND 15V PARAMETRIC RATINGS
·INPUT LEAKAGE CURRENTI_I = 100nA (MAX) AT V_DD = 18V T_A = 25°C
·100% TESTED FOR QUIESCENT CURRENT


Pinout




Specifications

Symbol	Rating	Value	Unit
VDD	Supply Voltage	0.5 to + 22	V
Vi	DC Input Voltage	0.5 to VDD + 0.5	V
II	DC Input Current	± 10	mA
PD	Power Dissipation per package Power Dissipation per Output Transistor	200 100	mW mW
Top	Operating Temperature	-55 to +125	°C
Tstg	Storage Temperature	65 to + 150	°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V_SS pin voltage.


Description

The HCF4001B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4001B QUAD 2-INPUT NOR GATE provides the system designer with direct implementation of the NOR function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.