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HCF4072BM1

Features: MEDIUM SPEED OPERATION :tPD = 60ns (TYP.) at VDD = 10VQUIESCENT CURRENT SPECIFIED UP TO 20V5V, 10V AND 15V PARAMETRIC RATINGSINPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C100% TESTED FOR QUIESCENT CURRENTMEETS ALL REQUIREMENTS OF JEDEC JESD13B STANDARD SPECIFICATIONS FOR...

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HCF4072BM1: Features: MEDIUM SPEED OPERATION :tPD = 60ns (TYP.) at VDD = 10VQUIESCENT CURRENT SPECIFIED UP TO 20V5V, 10V AND 15V PARAMETRIC RATINGSINPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C10...

HCF4072BM1 Data Sheet

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Part Number:
HCF4072BM1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 MEDIUM SPEED OPERATION :tPD = 60ns (TYP.) at VDD = 10V
 QUIESCENT CURRENT SPECIFIED UP TO 20V
 5V, 10V AND 15V PARAMETRIC RATINGS
 INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C
 100% TESTED FOR QUIESCENT CURRENT
 MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"



Pinout

Connection Diagram Connection Diagram


Specifications

Symbol Parameter Value Unit
VDD Supply Voltage -0.5 to +22 V
VI DC Input Voltage -0.5 to VDD + 0.5 V
II DC Input Current ± 10 mA
PD Power Dissipation per Package 200 mW
Power Dissipation per Output Transistor 100 mW
Top Operating Temperature -55 to +125 °C
Tstg Storage Temperature -65 to +150 °C



Description

 The HCF4072B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.

  The HCF4072B DUAL 4 INPUT OR GATE provides the system designer with direct implementation of the positive logic OR function and supplement the existing family of CMOS gates. 


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