HCF4041UB

Features: · BALANCED SINK AND SOURCE CURRENT:APPROXIMATELY 4 TIMES STANDARD B DRIVE· EQUALIZED DELAY TO TRUE AND COMPLEMENT OUTPUTS· QUIESCENT CURRENT SPECIFIED UP TO 20V· STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS · 5V, 10V AND 15V PARAMETRIC RATINGS· INPUT LEAKAGE CURRENT II = 100nA (MAX)...

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HCF4041UB Picture
SeekIC No. : 004359657 Detail

HCF4041UB: Features: · BALANCED SINK AND SOURCE CURRENT:APPROXIMATELY 4 TIMES STANDARD B DRIVE· EQUALIZED DELAY TO TRUE AND COMPLEMENT OUTPUTS· QUIESCENT CURRENT SPECIFIED UP TO 20V· STANDARDIZED SYMMETRICAL...

floor Price/Ceiling Price

Part Number:
HCF4041UB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· BALANCED SINK AND SOURCE CURRENT:APPROXIMATELY 4 TIMES STANDARD "B" DRIVE
· EQUALIZED DELAY TO TRUE AND COMPLEMENT OUTPUTS
· QUIESCENT CURRENT SPECIFIED UP TO 20V
· STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
· 5V, 10V AND 15V PARAMETRIC RATINGS
· INPUT LEAKAGE CURRENT
    II = 100nA (MAX) AT VDD = 18V TA = 25°C
· 100% TESTED FOR QUIESCENT CURRENT
· MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS
DEVICES"




Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDD
Supply Voltage
-0.5 to +22
V
VI
DC Input Voltage
-0.5 to VDD+0.5
V
II
DC Input Current
± 10
mA
PD
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
TOP
Operating Temperature
-55 to +125
°C
Tstg
Storage Temperature
-65 to +150
°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
All voltage values are referred to VSS pin voltage




Description

The HCF4041UB is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.

The HCF4041UB is a QUAD TRUE/COMPLEMENT buffer consisting of n and p channel units having low channel resistance and high current (sourcing and sinking) capability. This device is intended for use as a buffer, line driver,or CMOS to TTL driver. It can be used as an ultra-low power resistor network driver for A/D and D/A conversion, as a transmission line driver, and in other applications where high noise immunity and low power dissipation are primary design requirements.




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