Features: · PROPAGATION DELAY TIME :tPD = 60ns (Typ.) at VDD = 10V · BUFFERED INPUTS AND OUTPUTS· STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS· QUIESCENT CURRENT SPECIFIED UP TO 20V· 5V, 10V AND 15V PARAMETRIC RATINGS· INPUT LEAKAGE CURRENT II= 100nA (MAX) AT VDD = 18V TA = 25°C· 100% TESTED FO...
HCF4023B: Features: · PROPAGATION DELAY TIME :tPD = 60ns (Typ.) at VDD = 10V · BUFFERED INPUTS AND OUTPUTS· STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS· QUIESCENT CURRENT SPECIFIED UP TO 20V· 5V, 10V AND ...
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Symbol | Parameter² | Value | Unit |
VDD | Supply Voltage | -0.5 to +22 | V |
VI | DC Input Voltage | -0.5 to VDD + 0.5 | V |
II | DC Input Current | ± 10 | mA |
PD | Power Dissipation per Package | 200 | mW |
Power Dissipation per Output Transistor | 100 | mW | |
Top | Operating Temperature | -55 to +125 | |
Tstg | Storage Temperature | -65 to +150 |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
All voltage values are referred to VSS pin voltage.
The HCF4023B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.
The HCF4023B TRIPLE 3 INPUT NAND GATE provides the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.