HCF4012B

Specifications Symbol Parameter Value Unit VDD* Supply Voltage :HCC Types HCF Types 0.5 to + 20 0.5 to + 18 VV Vi Input Voltage 0.5 to VDD + 0.5 V II DC Input Current (any one input) ± 10 mA Ptot Total Power Dissipation (per package)Dissipation per Output T...

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SeekIC No. : 004359620 Detail

HCF4012B: Specifications Symbol Parameter Value Unit VDD* Supply Voltage :HCC Types HCF Types 0.5 to + 20 0.5 to + 18 VV Vi Input Voltage 0.5 to VDD + 0.5 V II DC Input Curren...

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Part Number:
HCF4012B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

Symbol Parameter Value Unit
VDD* Supply Voltage :HCC Types
   HCF Types
0.5 to + 20
0.5 to + 18
V
V
Vi Input Voltage 0.5 to VDD + 0.5 V
II DC Input Current (any one input) ± 10 mA
Ptot Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package-temperature Range
200

100
mW

mW
Top Operating Temperature : HCC Types
   HCF Types
55 to + 125
40 to + 85
°C
°C
Tstg Storage Temperature 65 to + 150 °C



Description

In the HCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B  series, the HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage.

The HCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of COS/MOS gates. All inputs and outputs are buffered.




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