Specifications Symbol Parameter Value Unit VDD* Supply Voltage :HCC Types HCF Types 0.5 to + 20 0.5 to + 18 VV Vi Input Voltage 0.5 to VDD + 0.5 V II DC Input Current (any one input) ± 10 mA Ptot Total Power Dissipation (per package)Dissipation per Output T...
HCC4012B: Specifications Symbol Parameter Value Unit VDD* Supply Voltage :HCC Types HCF Types 0.5 to + 20 0.5 to + 18 VV Vi Input Voltage 0.5 to VDD + 0.5 V II DC Input Curren...
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Symbol | Parameter | Value | Unit |
VDD* | Supply Voltage :HCC Types HCF Types |
0.5 to + 20 0.5 to + 18 |
V V |
Vi | Input Voltage | 0.5 to VDD + 0.5 | V |
II | DC Input Current (any one input) | ± 10 | mA |
Ptot | Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package-temperature Range |
200 100 |
mW mW |
Top | Operating Temperature : HCC Types HCF Types |
55 to + 125 40 to + 85 |
°C °C |
Tstg | Storage Temperature | 65 to + 150 | °C |
TheHCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B (extended temperature range and intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage.
The HCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of COS/MOS gates. All inputs and outputs are buffered.