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HB56UW473EJN

Features: ` 168-pin socket type package (Dual lead out) - Outline: 133.35 mm (Length) *25.40 mm (Height)*9.00 mm (Thickness) -pitch: 1.27 mm` Single 3.3 V (±0.3 V) supply` High speed - Access time: tRAC = 50/60/70ns (max) tCAC = 13/15/18ns (max)` Low power dissipation - Active mode: 3.73/3.40/3.08...

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SeekIC No. : 004359011 Detail

HB56UW473EJN: Features: ` 168-pin socket type package (Dual lead out) - Outline: 133.35 mm (Length) *25.40 mm (Height)*9.00 mm (Thickness) -pitch: 1.27 mm` Single 3.3 V (±0.3 V) supply` High speed - Access time: ...

HB56UW473EJN Data Sheet

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Part Number:
HB56UW473EJN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

`  168-pin socket type package (Dual lead out)
     - Outline: 133.35 mm (Length) *25.40 mm (Height)*9.00 mm (Thickness)
     - pitch: 1.27 mm
`  Single 3.3 V (±0.3 V) supply
`  High speed
     - Access time: tRAC = 50/60/70ns (max)
     tCAC = 13/15/18ns (max)
`  Low power dissipation
     - Active mode: 3.73/3.40/3.08 W (max) (HB56UW473EJN Series)
        3.31/3.02/2.74 W (max) (HB56UW465EJN Series)
     - Standby mode (TTL): 129.6 mW (max) (HB56UW473EJN Series)
         (TTL): 115.2 mW (max) (HB56UW465EJN Series)
         (CMOS): 9.72 mW (max) (L-version) (HB56UW473EJN Series)
         (CMOS): 8.64 mW (max) (L-version) (HB56UW465EJN Series)
`  JEDEC standard outline unbuffered 8-byte DIMM
`  EDO page mode capability
`  Refresh period
     - 2048 refresh cycles: 32 ms
        128 ms (L-version)
`  4 variations of refresh
     - RAS -only refresh
     - CAS -before-RAS refresh
     - Hidden refresh
     - Self refresh (L-version)


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
0.5 to + 4.6
V
Supply voltage relative to VSS
VCC
0.5 to + 4.6
V
Short circuit output current
Iout
50
mA
Power dissipation (HB56UW473EJN)
PT
18
W
Power dissipation (HB56UW465EJN)
PT
16
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C



Description

The HB56UW473EJN, HB56UW465EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56UW473EJN is a 4M × 72 dynamic RAM module, mounted 18 pieces of 16-Mbit DRAM (HM51W17805) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD). The HB56UW465EJN is a 4M × 64 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM51W17805) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD). The HB56UW473EJN, B56UW465EJN offer Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56UW473EJN, HB56UW465EJN is 168-pin socket type package (dual lead out). Therefore, they make high density mounting possible without surface mount technology. They provide common data inputs and outputs. Decoupling capacitors are mounted on the module board.




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