Features: ` 168-pin socket type package (Dual lead out) - Outline: 133.35 mm (Length) *25.40 mm (Height) * 9.00 mm (Thickness) - Lead pitch: 1.27 mm` Single 3.3 V (±0.3 V) supply` High speed - Access time: tRAC = 50/60/70ns (max) tCAC = 13/15/18ns (max)` Low power dissipation - Active mode: 5.83/5...
HB56UW464EJN: Features: ` 168-pin socket type package (Dual lead out) - Outline: 133.35 mm (Length) *25.40 mm (Height) * 9.00 mm (Thickness) - Lead pitch: 1.27 mm` Single 3.3 V (±0.3 V) supply` High speed - Acces...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
0.5 to + 4.6 |
V |
Supply voltage relative to VSS |
VCC |
0.5 to + 4.6 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation(HB56UW472EJN) |
PT |
18 |
W |
Power dissipation (HB56UW464EJN) |
PT |
16 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The HB56UW472EJN, HB56UW464EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56UW472EJN is a 4M× 72 dynamic RAM module, mounted 18 pieces of 16-Mbit DRAM (HM51W16405) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD). The HB56UW464EJN is a 4M × 64 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM51W16405) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD). The HB56UW472EJN, HB56UW464EJN offer Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56UW472EJN, HB56UW464EJN is 168-pin socket type package (dual lead out). Therefore, they make high density mounting possible without surface mount technology. They provide common data inputs and outputs. Decoupling capacitors are mounted on the module board.