Features: • 168-pin socket type package (Dual lead out) - Lead pitch: 1.27 mm• Single 3.3 V (±0.3 V) supply• High speed - Access time: tRAC = 60/70/80 ns (max) - Access time: tCAC = 20/23/25 ns (max)• Low power dissipation - Active mode: 4.62/4.04/3.75 W (max) - Standby mod...
HB56UW464EJ-7B: Features: • 168-pin socket type package (Dual lead out) - Lead pitch: 1.27 mm• Single 3.3 V (±0.3 V) supply• High speed - Access time: tRAC = 60/70/80 ns (max) - Access time: tCAC ...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
0.5 to + 4.6 |
V |
Supply voltage relative to VSS |
VCC |
0.5 to + 4.6 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
18 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The HB56UW464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
The HB56UW464EJ is a 4M × 64 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM51W16405BS) sealed in SOJ package,1 piece of 16-bit CMOS line driver (74ALVCH16244) sealed in TSSOP package and 1 piece of 20-bit CMOS line driver (74ALVCH16827) sealed in TSSOP package. It offers Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56UW464EJ is 168-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. The HB56UW464EJ provides common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ on the module board.