Features: ` 168-pin socket type package (Dual lead out) - Lead pitch : 1.27 mm` Single 3.3 V (±0.3 V)` High speed - Access time: tRAC = 60 ns/70 ns (max) - Access time: tCAC = 20 ns/23 ns (max)` Low power dissipation - Active mode: 9.11 W/8.46 W (max) - Standby mode (TTL): 166 mW (max)` Buffered i...
HB56UW1673E-7A: Features: ` 168-pin socket type package (Dual lead out) - Lead pitch : 1.27 mm` Single 3.3 V (±0.3 V)` High speed - Access time: tRAC = 60 ns/70 ns (max) - Access time: tCAC = 20 ns/23 ns (max)` Low...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
0.5 to + 4.6 |
V |
Supply voltage relative to VSS |
VCC |
0.5 to + 4.6 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
19 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The HB56UW1673E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56UW1673E is a 16 M ×72 Dynamic RAM Module, mounted 18 pieces of 64-Mbit DRAM (HM5165405ATT) sealed in TSOP package and 2 pieces of 16-bit BiCMOS line driver (74LVT16244) sealed in TSSOP package. The HB56UW1673E offers Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56UW1673E is 168-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the its module board.