Features: ` 168-pin socket type package (Dual lead out) - Outline: 133.35 mm (Length) * 25.40 mm (Height) * 9.00 mm (Thickness) - Lead pitch : 1.27 mm` Single 3.3 V (±0.3 V)` High speed - Access time: tRAC = 60 ns/70 ns (max) - Access time: tCAC = 15 ns/18 ns (max)` Low power dissipation - Active ...
HB56UW1664EJN: Features: ` 168-pin socket type package (Dual lead out) - Outline: 133.35 mm (Length) * 25.40 mm (Height) * 9.00 mm (Thickness) - Lead pitch : 1.27 mm` Single 3.3 V (±0.3 V)` High speed - Access tim...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
0.5 to + 4.6 |
V |
Supply voltage relative to VSS |
VCC |
0.5 to + 4.6 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
18 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56UW1672EJN Series is a 16 M× 72 Dynamic RAM Module, mounted 18 pieces of 64-Mbit DRAM (HM5164405AJ) sealed in SOJ package and 1 piece of serial EEPROM (24C02) for Presence Detect (PD). The HB56UW1664EJN Series is a 16 M × 64 Dynamic RAM Module, mounted 16 pieces of 64-Mbit DRAM (HM5164405AJ) sealed in SOJ package and 1 piece of serial EEPROM (24C02) for Presence Detect (PD). The HB56UW1672EJN Series, HB56UW1664EJN Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56UW1672EJN Series, HB56UW1664EJN Series are 168-pin socket type package (dual lead out). Therefore, they make high density mounting possible without surface mount technology. They provide common data inputs and outputs. Decoupling capacitors are mounted beside each SOJ on the its module board.