Features: • 168-pin socket type package (Dual lead out) - Lead pitch: 1.27 mm• Single 5 V (±5%) supply.• High speed - Access time: tRAC = 60/70/80 ns (max) - Access time: tCAC = 15/18/20 ns (max)• Low power dissipation - Active mode: 5.1/4.7/4.2 W (max) - Standby mode (TTL)...
HB56U264EJN: Features: • 168-pin socket type package (Dual lead out) - Lead pitch: 1.27 mm• Single 5 V (±5%) supply.• High speed - Access time: tRAC = 60/70/80 ns (max) - Access time: tCAC = 15...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
The HB56U264EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
developed as an optimized main memory solution for 4 and 8 Byte processor applications.
The HB56U264EJN is a 2M × 64 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM5117805BJ) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD).
The HB56U264EJN offers Extended Data Out (EDO) Page Mode as a high speed access mode.
An outline of the HB56U264EJN is 168-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. It provides common data inputs data outputs. Decoupling capacitors are mounted beneath each SOJ on the module board.