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HB56SW864ESN

Features: ` 168-pin socket type package (Dual lead out) -Lead pitch: 1.27 mm` Single 3.3 V (+0.3 V/ 0.15 V) supply` JEDEC standard outline unbufferd 8 byte DIMM` High speed -Access time: tRAC = 60/70 ns (max) tCAC = 15/18 ns (max)` Low power dissipation -Active mode: 5.51/4.86 W (max) (HB56SW872ES...

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SeekIC No. : 004358962 Detail

HB56SW864ESN: Features: ` 168-pin socket type package (Dual lead out) -Lead pitch: 1.27 mm` Single 3.3 V (+0.3 V/ 0.15 V) supply` JEDEC standard outline unbufferd 8 byte DIMM` High speed -Access time: tRAC = 60/7...

HB56SW864ESN Data Sheet

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Part Number:
HB56SW864ESN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

`  168-pin socket type package (Dual lead out)
     - Lead pitch: 1.27 mm
`  Single 3.3 V (+0.3 V/ 0.15 V) supply
`  JEDEC standard outline unbufferd 8 byte DIMM
`  High speed
     - Access time: tRAC = 60/70 ns (max)
     tCAC = 15/18 ns (max)
`  Low power dissipation
     - Active mode: 5.51/4.86 W (max) (HB56SW872ESN)
     4.90/4.32 W (max) (HB56SW864ESN)
     - Standby mode (TTL): 259 mW (max) (HB56SW872ESN)
     (TTL): 230 mW (max) (HB56SW864ESN)
     (CMOS): 130 mW (max) (HB56SW872ESN)
     (CMOS): 115 mW (max) (HB56SW864ESN)
`  EDO page mode capability
`  4,096 refresh cycle: 64 ms
`  2 variations of refresh
     - RAS -only refresh
     -CAS -before-RAS refresh


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
0.5 to +4.6
V
Supply voltage relative to VSS
VCC
-0.5 to +4.6
V
Short circuit output current
Iout
50
mA
Power dissipation (HB56SW872ESN)
PT
18
W
Power dissipation (HB56SW864ESN)
PT
16
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C



Description

The HB56SW872ESN, HB56SW864ESN belong to 8 Byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56SW872ESN is a 8M ×72 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM (HM51W16405) sealed in TCP package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD). The HB56SW864ESN is a 8M ´ 64 dynamic RAM module, mounted 32 pieces of 16-Mbit DRAM (HM51W16405) sealed in TCP package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD). The HB56SW872ESN, HB56SW864ESN offer Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56SW872ESN, HB56SW864ESN is 168-pin socket type package (dual lead out). Therefore, they make high density mounting possible without surface mount technology. They provide common data inputs and outputs. Decoupling capacitors are mounted beneath each TCP on the module board.




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