Features: ` 168-pin socket type package (Dual lead out)- Lead pitch : 1.27 mm` Single 3.3 V supply (±0.3 V)` High speed- Access time: tRAC = 50 ns/60 ns (max)- Access time: tCAC = 18 ns/20 ns (max)` Low power dissipation- Active mode: 8.78 W/7.49 W (max)- Standby mode (TTL): 295.2 mW (max)` J...
HB56SW3272ESK-5: Features: ` 168-pin socket type package (Dual lead out)- Lead pitch : 1.27 mm` Single 3.3 V supply (±0.3 V)` High speed- Access time: tRAC = 50 ns/60 ns (max)- Access time: tCAC = 18 ns/20 ns (ma...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Note |
Voltage on any pin relative to VSS |
VT |
0.5 to +4.6 |
V |
1 |
Supply voltage relative to VSS |
VCC |
0.5 to +4.6 |
V |
1 |
Short circuit output current |
Iout |
50 |
mA |
|
Power dissipation |
PT |
19 |
W |
|
Storage temperature |
Tstg |
50 to +125 |
°C |
The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56SW3272ESK is 32 M × 72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM (HM5165405) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP package. The HB56SW3272ESK offer Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56SW3272ESK are 168-pin socket type package (dual lead out). Therefore, it make high density mounting possible without surface mount technology. It provide common data inputs and outputs. Decoupling capacitors are mounted beside each TCP on its module board.
Note of HB56SW3272ESK: Do not push the cover or drop the modules in order to protect from mechanical defects, which would be electrical defects.