Features: · 168-pin socket type package (Dual read out) - Lead pitch : 1.27 mm· Single 5 V (±5%) supply· High speed - Access time : tRAC = 60 / 70 /80 ns (max.) - Access time : tCAC = 20 / 23 /25 (max.)· Low power dissipation - Active mode: 8.37 / 7.42 / 6.95 W (max.) - Standby mode: 714 mW (max.)...
HB56R872ES: Features: · 168-pin socket type package (Dual read out) - Lead pitch : 1.27 mm· Single 5 V (±5%) supply· High speed - Access time : tRAC = 60 / 70 /80 ns (max.) - Access time : tCAC = 20 / 23 /25 (m...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to Vss. For 10ns or less |
VT |
-0.5 to +7.0 -1.5 |
V |
Supply voltage relative to Vss |
Vcc |
-0.5 to +7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
Pt |
37 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
-55 to +125 |
°C |
The HB56R872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has beendeveloped as an optimized main memory solution for 4 and 8 Byte processor applications.
The HB56R872ES is a 8M x 72 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM (HM5116400) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver (74ABT16244DGG) sealed in TSSOP package.
An outline of the HB56R872ES is 168-pin socket type package (dual read out). Therefore, the HB56R872ES makes high density mounting possible without surface mount technology.
The HB56R872ES provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the its module board.