Features: · 168-pin socket type package (Dual lead out) -Lead pitch: 1.27 mm· Single 5 V (±5%) supply· JEDEC standard outline buffered 8 byte DIMM· High speed -Access time: tRAC = 60/70 ns (max) tCAC = 20/23 ns (max)· Low power dissipation -Active mode: 7.48/6.64 W (max) -Standby mode (TTL): 672 m...
HB56R864ES: Features: · 168-pin socket type package (Dual lead out) -Lead pitch: 1.27 mm· Single 5 V (±5%) supply· JEDEC standard outline buffered 8 byte DIMM· High speed -Access time: tRAC = 60/70 ns (max) tCA...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
0.5 to +7.0 |
V |
Supply voltage relative to VSS |
VCC |
0.5 to +7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
33 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The HB56R864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. It is a 8M × 64 dynamic RAM module, mounted 32 pieces of 16-Mbit DRAM (HM5116400) sealed in TCP package, 1 piece of 16-bit BiCMOS line driver (74ABT16244) sealed in TSSOP package and 1 piece of 20-bit BiCMOS line driver (74ABT16827) sealed in TSSOP package. An outline of the HB56R864ES is 168-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module board.