Features: • 168-pin socket type package (Dual lead out) Lead pitch: 1.27 mm• Single 5 V (±5%) supply• High speed -Access time: tRAC = 60/70 ns (max)• Access time: tCAC = 15/18 ns (max)• Low power dissipation -Active mode: 3.6/3.2 W (max) -Standby mode (TTL): 42 mW (ma...
HB56H164EJN-6B: Features: • 168-pin socket type package (Dual lead out) Lead pitch: 1.27 mm• Single 5 V (±5%) supply• High speed -Access time: tRAC = 60/70 ns (max)• Access time: tCAC = 15/1...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Note |
Supply voltage |
VSS |
0 |
0 |
0 |
V |
|
VCC |
4.75 |
5.0 |
5.25 |
V |
1 | |
Input high voltage |
VIH |
2.4 |
- |
5.5 |
V |
1 |
Input low voltage |
VIL |
1.0 |
- |
0.8 |
V |
1 |
The HB56H164EJN is a 1M× 64 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5118165BJ) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD). The HB56H164EJN offers Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the B56H164EJN is 168-pin socket type package (dual lead out). Therefore, the product makes high density mounting possible without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ on the module board.