Features: · 72-pin single in-line package -Outline: 107.95 mm (Length)× 31.75/25.4 mm (Height) × 9.14 mm (Thickness) -Lead pitch : 1.27 mm· Single 5 V (±5%)· High speed -Access time: 60 ns/70 ns (max)· Low power dissipation -Active mode: 7.25 W/6.62 W (max) (HB56E836 Series) -Active mode: 6.93 W/6...
HB56E436: Features: · 72-pin single in-line package -Outline: 107.95 mm (Length)× 31.75/25.4 mm (Height) × 9.14 mm (Thickness) -Lead pitch : 1.27 mm· Single 5 V (±5%)· High speed -Access time: 60 ns/70 ns (ma...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to +7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to +7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
12 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The HB56E836 Series is a 8 M ×36 Dynamic RAM Module, mounted 16 pieces of 16-Mbit DRAM (HM5117405) sealed in SOJ package and 8 piece of of 4-Mbit DRAM (HM514105) sealed in SOJ package. The HB56E436 Series is a 4 M× 36 Dynamic RAM Module, mounted 8 pieces of 16-Mbit DRAM (HM5117405) sealed in SOJ package and 4 piece of of 4-Mbit DRAM (HM514105) sealed in SOJ package. The HB56E836 Series, HB56E436 Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the Series are 72-pin single in-line package. Therefore, the HB56E836 Series, HB56E436 Series make high density mounting possible without surface mount technology. The Series provide common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ on the module board.