HB56AW272E-6

Features:

·  168-pin socket type package (Dual lead out)
     - Outline: 133.35 mm (Length)× 25.40 mm (Height)×4.00 mm (Thickness)
     - Lead pitch: 1.27 mm
·  Single 3.3 V (±0.3 V) supply
·  High speed
     - Access time: tRAC = 50/60/70 ns (max)
     tCAC = 18/20/23 ns (max)
·  Low power dissipation
     - Active mode: 3.60/3.28/2.96 W (max)
     - Standby mode (TTL): 101 mW (max)
     (CMOS): 68.4 mW (max)
·  Buffered input except RAS and DQ
·  4 byte interleave enabled, dual address input (A0/B0)
·  JEDEC standard outline buffered 8-byte DIMM
·  Fast page mode capability
·  2,048 refresh cycles: 32 ms
·  2 variations of refresh
     - RAS -only refresh
     - CAS -before-RAS refresh


Specifications

Parameter	Symbol	Value	Unit
Voltage on any pin relative to VSS	VT	0.5 to +4.6	V
Supply voltage relative to VSS	VCC	0.5 to +4.6	V
Short circuit output current	Iout	50	mA
Power dissipation	PT	10	W
Operating temperature	Topr	0 to +70	°C
Storage temperature	Tstg	55 to +125	°C

Description

The HB56AW272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56AW272E is a 2M ×72 dynamic RAM module, mounted 9 pieces of 16-Mbit DRAM (HM51W17800) sealed in TSOP package and 2 pieces of 16-bit BiCMOS line driver (74LVT16244) sealed in TSSOP package. An outline of the HB56AW272E is 168-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted on the module board.