Features: · 168-pin socket type package (dual lead out) -Lead pitch: 1.27 mm· Single 3.3 V (±0.3 V) supply· High speed -Access time: tRAC = 60/70/80 ns (max) -Access time: tCAC = 20/25/25 ns (max)· Low power dissipation -Active mode: 5.22/4.58/3.93 W (max) -Standby mode (TTL): 166 mW (max)· Buffer...
HB56AW172E: Features: · 168-pin socket type package (dual lead out) -Lead pitch: 1.27 mm· Single 3.3 V (±0.3 V) supply· High speed -Access time: tRAC = 60/70/80 ns (max) -Access time: tCAC = 20/25/25 ns (max)· ...
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Features: • 72-pin single in-line package - Lead pitch : 1.27 mm• Single 5 V (± 5%) su...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
0.5 to +7.0 |
V |
Supply voltage relative to VSS |
VCC |
0.5 to +7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
19 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The HB56AW172E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
The HB56AW172E is a 1M ×72 dynamic RAM module, mounted 18 pieces of 4-Mbit DRAM (HM51W4400BTT) sealed in TSOP package and 2 pieces of 16-bit BiCMOS line driver (74LVT16244DGG) sealed in TSSOP package.
An outline of the HB56AW172E is 168-pin socket type package (dual lead out).
Therefore, the HB56AW172E makes high density mounting possible without surface mount technology.The HB56AW172E provides common data inputs and outputs.Decoupling capacitors are mounted beside each TSOP on the its module board.