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HAF2021L

Features: • Logic level operation (6 V Gate drive)• High endurance capability against to the short circuit• Builtin the over temperature shutdown circuit• Latch type shutdown operation (Need 0 voltage recovery)SpecificationsDrain to source voltage VDSS................. 60 V...

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SeekIC No. : 004358489 Detail

HAF2021L: Features: • Logic level operation (6 V Gate drive)• High endurance capability against to the short circuit• Builtin the over temperature shutdown circuit• Latch type shutdown...

HAF2021L Data Sheet

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Part Number:
HAF2021L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• Logic level operation (6 V Gate drive)
• High endurance capability against to the short circuit
• Builtin the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery)


Specifications

Drain to source voltage VDSS................. 60 V
Gate to source voltage VGSS .................16 V
Gate to source voltage VGSS .............2.5 V
Drain current ID .....................................50 A
Drain peak current ID(pulse)................ 100 A
Body-drain diode reverse drain current IDR ...50 A
Channel dissipation Pch ............................. 100 W
Channel temperature Tch ..........................150
Storage temperature Tstg........... 55 to +150


Description

This HAF2021L FET has the over temperature shutdown capability sensing to the junction temperature. This HAF2021L FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.




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