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HAF2017(L)

Features: • Logic level operation (4 to 6 V Gate drive)• High endurance capability against to the short circuit• Built-in the over temperature shutdown circuit• Latch type shutdown operation (Need 0 voltage recovery)Specifications Item Symbol Rating Unit Drain to...

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SeekIC No. : 004358487 Detail

HAF2017(L): Features: • Logic level operation (4 to 6 V Gate drive)• High endurance capability against to the short circuit• Built-in the over temperature shutdown circuit• Latch type sh...

HAF2017(L) Data Sheet

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Part Number:
HAF2017(L)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Description



Features:

• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery)


Specifications

Item Symbol Rating Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS 16 V
Gate to source voltage VGSS 2.5 V
Drain current ID 20 A
Drain peak current ID (pulse) Note1 40 A
Body-drain diode reverse drain current IDR 20 A
Channel dissipation PchNote2 50 W
Channel temperature Tch 150
Storage temperature Tstg 55 to +150
Notes: 1. PW 10s, duty cycle 1%
            2. Value at Tch = 25


Description

This HAF2017(L) FET has the over temperature shutdown capability sensing the junction temperature. This HAF2017(L) FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc..




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