Features: ` Logic level operation (5 to 6 V Gate drive)` High endurance capability against to the short circuit` Builtin the over temperature shutdown circuit` Temperature hysteresis type.` High density mounting.Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS ...
HAF2015RJ: Features: ` Logic level operation (5 to 6 V Gate drive)` High endurance capability against to the short circuit` Builtin the over temperature shutdown circuit` Temperature hysteresis type.` High den...
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Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | 16 | V |
Gate to source voltage | VGSS | -2.5 | |
Drain current | ID | 2 | A |
Peak Drain Current | ID(pulse)Note1 | 4 | A |
Body-drain diode reverse drain current | IDR | 2 | A |
Avalanche current | IAPNote4 | 0.51 | A |
Avalanche energy | EARNote4 | 25 | mJ |
Channel dissipation |
PchNote2 |
2 |
W |
Channel dissipation | PchNote3 | 1.5 | |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |