Features: ·Logic level operation (4 to 6 V Gate drive)·High endurance capability against to the short circuit·Built-in the over temperature shut-down circuit·Latch type shut-down operation (Need 0 voltage recovery)Specifications Item Symbol Value Unit Drain to source voltage ...
HAF2014: Features: ·Logic level operation (4 to 6 V Gate drive)·High endurance capability against to the short circuit·Built-in the over temperature shut-down circuit·Latch type shut-down operation (Need 0 v...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
16 |
V |
VGSS |
2.5 |
V | |
Drain current |
ID |
40 |
A |
Drain peak current |
ID (pulse) Note 1 |
80 |
A |
Body-drain diode reverse drain current |
IDR |
40 |
A |
Channel dissipation |
Pch Note 2 |
50 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |
This HAF2014 FET has the over temperature shut-down capability sensing to the junction temperature.
This HAF2014 FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.