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HAF2012(L)

Features: • Logic level operation (4 to 6 V Gate drive)• High endurance capability against to the short circuit• Built-in the over temperature shut-down circuit• Latch type shut-down operation (Need 0 voltage recovery)Specifications Item Symbol Value Unit ...

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SeekIC No. : 004358483 Detail

HAF2012(L): Features: • Logic level operation (4 to 6 V Gate drive)• High endurance capability against to the short circuit• Built-in the over temperature shut-down circuit• Latch type s...

HAF2012(L) Data Sheet

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Part Number:
HAF2012(L)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch type shut-down operation (Need 0 voltage recovery)


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
16
V
VGSS
2.8
V
Drain current
ID
20
A
Drain peak current
ID (pulse)Note 1
40
A
Body-drain diode reverse drain current
IDR
20
A
Channel dissipation
Pch Note 2
50
W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150

Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Ta = 25


Description

This HAF2012(L) FET has the over temperature shut-down capability sensing to the junction temperature.
This HAF2012(L) FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.




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