HAF2011

Features: This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power co...

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SeekIC No. : 004358480 Detail

HAF2011: Features: This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit ope...

floor Price/Ceiling Price

Part Number:
HAF2011
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
`  Logic level operation (4 to 6 V Gate drive)
`  High endurance capability against to the short circuit
`  Builtin the over temperature shutdown circuit
`  Latch type shutdown operation (Need 0 voltage recovery)




Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
16
V
Gate to source voltage
VGSS
-2.5
V
Drain current
ID
40
A
Drain peak current
ID(pulse)1
80
A
Body-drain diode reverse drain current
IDR
40
A
Channel dissipation
Pch2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
-55to+150
°C
Note: 1. PW 10s, duty cycle 1 %
          2. Value at Ta = 25°C



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