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H5N5016PL

Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item SYMBOL MAX UNIT Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID ...

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SeekIC No. : 004357708 Detail

H5N5016PL: Features: • Low on-resistance• Low leakage current• High speed switching• Built-in fast recovery diodeSpecifications Item SYMBOL MAX UNIT Drain to source v...

H5N5016PL Data Sheet

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Part Number:
H5N5016PL
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching
• Built-in fast recovery diode


Specifications

Item
SYMBOL
MAX
UNIT
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
50
A
Drain peak current
I (pulse) Note1
200
A
Body-drain diode reverse drain current
IDR
50
A
Body-drain diode reverse drain peak current
I (pulse) Note1
200
A
Avalanche current
IAP Note3
10
A
Avalanche energy
EAR Note3
5.5
mJ
Channel dissipation
PchNote2
250
W
Channel to case Thermal impedance
ch-c
0.5
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes 1. PW 10 µs, duty cycle 1%
          2. Value at Tc = 25
          3. STch = 25, Tch 150


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