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H5N5001FM

Features: · Low on-resistance : RDS(on) =1.1W typ.· Low leakage current : IDSS =1mA max (at VDS = 500 V)· High speed switching : tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)· Low gate charge : Qg = 15nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)· Avalanche ratingsSpecifications Item...

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SeekIC No. : 004357697 Detail

H5N5001FM: Features: · Low on-resistance : RDS(on) =1.1W typ.· Low leakage current : IDSS =1mA max (at VDS = 500 V)· High speed switching : tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)· Low gate char...

H5N5001FM Data Sheet

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Part Number:
H5N5001FM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Low on-resistance : RDS(on) =1.1W typ.
·  Low leakage current : IDSS =1mA max (at VDS = 500 V)
·  High speed switching : tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
·  Low gate charge : Qg = 15nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
·  Avalanche ratings


Specifications

Item Symbol Ratings Unit
Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Channel dissipation

Channel to case Thermal Impedance

Channel temperature

Storage temperature		 VDSS

VGSS

ID

ID(pulse) Note1

IDR

IDR(pulse) Note1

IAP Note3

Pch Note2

ch-c

Tch

Tstg		 500

±30

5

20

5

20

5

30

4.17

150

55 to +150		 V

V

A

A

A

A

A

W

/W






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