Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 300 V Gate to Source voltage VGSS ±30 V Drain current ID 88 A Drain peak current ID (pulse) Note1 176 A ...
H5N3011P: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 300 V Gate to Source v...
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Item | Symbol | Ratings | Unit |
Drain to Source voltage | VDSS | 300 | V |
Gate to Source voltage | VGSS | ±30 | V |
Drain current | ID | 88 | A |
Drain peak current | ID (pulse) Note1 | 176 | A |
Body-Drain diode reverse Drain current | IDR | 88 | A |
Body-Drain diode reverse Drain peak current | IDR (pulse) Note1 | 176 | A |
Avalanche current | IAPNote3 | 30 | A |
Avalanche energy | EARNote3 | 54 | mJ |
Channel dissipation | Pch Note2 | 150 | W |
Channel to case thermal impedance | ch-c | 0.833 | /W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |