Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source voltage VGSS ±30 V Drain current ID 15 A Drain peak current ID (pulse) Note 1 60 A ...
H5N3005LD: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source v...
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 300 | V |
Gate to source voltage | VGSS | ±30 | V |
Drain current | ID | 15 | A |
Drain peak current | ID (pulse) Note 1 | 60 | A |
Body-drain diode reverse drain current | IDR | 15 | A |
Body-drain diode reverse drain peak current | IDR (pulse) Note1 | 60 | A |
Avalanche current | IAP Note3 | 13.5 | mJ |
Avalanche energy | EAR Note3 | 75 | W |
Channel dissipation | Pch Note2 | 1.67 | °C/W |
Channel temperature | Tch | 150 | °C |
Storage temperature | Tstg | 55 to +150 | °C |