Features: • Low on-resistance• Low leakage current• High Speed Switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source voltage VGSS ±30 V Drain current ID ...
H5N3007CF: Features: • Low on-resistance• Low leakage current• High Speed Switching• Built-in fast recovery diodeSpecifications Item Symbol Ratings Unit Drain to source...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
300 |
V |
Gate to source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
15 |
A |
Drain peak current |
ID(pulse)Note 1 |
60 |
A |
Body-drain diode reverse drain current |
IDR |
15 |
A |
Body-drain diode reverse drain peak current |
IDR(pulse)Note 1 |
60 |
A |
Avalanche current |
IAPNote 3 |
15 |
A |
Channel dissipation |
Pch Note 2 |
35 |
W |
Channel to case Thermal Impedance |
ch-c |
3.57 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |