Features: • Low on-resistance• Low drive current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 280 V Gate to Source voltage VGSS ±30 V Drain current ID 60 A Drain peak current ID(pulse) Note1 240 A Bod...
H5N2801P: Features: • Low on-resistance• Low drive current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 280 V Gate to Source vol...
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Item | Symbol | Ratings | Unit |
Drain to Source voltage | VDSS | 280 | V |
Gate to Source voltage | VGSS | ±30 | V |
Drain current | ID | 60 | A |
Drain peak current | ID(pulse) Note1 | 240 | A |
Body-Drain diode reverse Drain current | IDR | 60 | A |
Avalanche current | IAP Note3 | 35 | A |
Avalanche energy | EAR Note3 | 74.5 | mJ |
Channel dissipation | Pch Note2 | 150 | W |
Channel to case thermal impedance | ch-c | 0.833 | /W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |