Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol VALUE Unit Drain to Source voltage VDSS 250 V Gate to Source voltage VGSS ±30 V Drain current ID 20 A Drain peak current ID...
H5N2517FN: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol VALUE Unit Drain to Source voltage VDSS 250 V Gate...
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Item |
Symbol |
VALUE |
Unit |
Drain to Source voltage |
VDSS |
250 |
V |
Gate to Source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
20 |
A |
Drain peak current |
ID (pulse)Note1 |
80 |
A |
Body-Drain diode reverse Drain current |
IDR |
20 |
A |
Body-Drain diode reverse Drain peak current |
IDR(pulse)Note1 |
80 |
A |
Avalanche current |
IAPNote3 |
7 |
A |
Avalanche energy |
EARNote3 |
3.0 |
mJ |
Channel dissipation |
PchNote2 |
30 |
W |
Channel to case thermal impedance |
ch-c |
4.17 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |