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H2N7002SN

SpecificationsDrain-Source Voltage ............................................60 VDrain-Gate Voltage (RGS=1M) ........................... 60 VGate-Source Voltage .........................................±20 VContinuous Drain Current (TA=25)(1) ...........200 mAContinuous Drain Current (TA=100)(1)...

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SeekIC No. : 004357554 Detail

H2N7002SN: SpecificationsDrain-Source Voltage ............................................60 VDrain-Gate Voltage (RGS=1M) ........................... 60 VGate-Source Voltage ......................................

H2N7002SN Data Sheet

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Part Number:
H2N7002SN
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Specifications

Drain-Source Voltage ............................................60 V
Drain-Gate Voltage (RGS=1M) ........................... 60 V
Gate-Source Voltage .........................................±20 V
Continuous Drain Current (TA=25)(1) ...........200 mA
Continuous Drain Current (TA=100)(1) .........115 mA
Pulsed Drain Current (TA=25)(2) ...................800 mA
Total Power Dissipation (TC=25)...................200 mW
Derate above 25 ...................................0.16 mW /
Storage Temperature................................-55 to 150
Operating Junction Temperature ..............-55 to 150
Lead Temperature, for 10 second Soldering .......260


Description

H2N7002SN is N-channel enhancement-mode MOS transistor.


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