H2N7000

•Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
Junction Temperature................................................................................... +150 °C Maximum
•Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 400 mW
•Maximum Voltages and Currents (Ta=25°C)
BVDSS Drain to Source Voltage............................................................................................ 60 V
BVGSS Gate to Source Voltage............................................................................................. 40 V
ID Drain Current.............................................................................................................. 200 mA

The H2N7000 is a type of N-channel enhancement mode transistor, which is designed for high voltage, high speed applications,such as switching regulators, converters, solenoid and relay drivers.

The absolute maximum ratings and characteristics(Ta=25°C) of the H2N7000 can be summarized as:(1)maximum te mperatures:storage temperature is -55°C+150 °C,junction temperature is +150 °C maximum;(2)maximum power dissipation:total power dissipation (Ta=25°C)is 400 mW;(3)maximum voltages and currents (Ta=25°C):BVDSS drai nto source voltage is 60 V,BVGSS gate to source voltage is 40 V,ID drain current is 200 mA.characteristics:(1):VDSS is 60V min when ID is 10uA and VGS is 0;(2):IDSS is 1 uA max when VDS is 48V;(3):±IGSS is±10 nA when VGS is ±15V;(4)VGS(th) is 0.8V min and 3 V when VDS is 3V and ID is 1mA;(5):ID(on) is 75mA min when VGS is 4.5V and VDS is 10V;(6):RDS(on) is 5 when VGS is 10V and ID is 0.5A;(7):VDSS(on)1 is 2.5 V max when VGS is 10V and ID is 0.5 A;(8):VDSS(on)2 is 0.4 v max when VGS is 4.5V and ID is 75mA.etc.