H11G1M

Transistor Output Optocouplers Hi Volt Photodarling

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SeekIC No. : 0097822 Detail

H11G1M: Transistor Output Optocouplers Hi Volt Photodarling

floor Price/Ceiling Price

US $ .27~.41 / Piece | Get Latest Price
Part Number:
H11G1M
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.41
  • $.36
  • $.32
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 100 V
Maximum Collector Emitter Saturation Voltage : 1 V Isolation Voltage : 5300 Vrms
Maximum Forward Diode Voltage : 1.5 V Maximum Power Dissipation : 260 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 40 C
Package / Case : PDIP-6 Packaging : Bulk    

Description

Current Transfer Ratio :
Maximum Collector Current :
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Input Type : DC
Isolation Voltage : 5300 Vrms
Maximum Collector Emitter Saturation Voltage : 1 V
Package / Case : PDIP-6
Maximum Collector Emitter Voltage : 100 V
Maximum Power Dissipation : 260 mW


Features:

High BVCEO
Minimum 100V for H11G1M
Minimum 80V for H11G2M
Minimum 55V for H11G3M
High sensitivity to low input current
(Min. 500% CTR at IF = 1mA)
Low leakage current at elevated temperature
(Max. 100A at 80)
Underwriters Laboratory (UL) recognized File # E90700, Volume 2





Application

CMOS logic interface
Telephone ring detector
Low input TTL interface
Power supply isolation
Replace pulse transformer





Specifications

Symbol Parameter Value Units
TOTAL DEVICE
TSTG

TOPR

TSOL
Storage Temperature

Operating Temperature

Lead Solder Temperature (Wave Solder)
-55 to +150

-40 to +100

260 for 10 sec




PD Total Device Power Dissipation @ TA=25

Derate Above 25
260

3.5
mW

mW/
EMITTER
IF

VR

IF(pk)
Forward Input Current

Reverse Input Voltage

Forward Current Peak (1s pulse, 300pps)
60

6.0

3.0
mA

V

A
PD LED Power Dissipation @ TA=25

Derate Above 25
100

1.8
mW

mW/
DETECTOR
VCEO Collector-Emitter Voltage
H11G1M

H11G2M

H11G3M

100

80

55
V
PD LED Power Dissipation @ TA=25

Derate Above 25
200

2.67
mW

mW/





Description

The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.






Parameters:

Technical/Catalog InformationH11G1M
VendorFairchild Optoelectronics Group
CategoryIsolators
Voltage - Isolation5300Vrms
Input TypeDC
Output TypeDarlington with Base
Current - Output / Channel150mA
Voltage - Output100V
Vce Saturation (Max)1V
Current Transfer Ratio (Min)500% @ 5mA
Mounting TypeThrough Hole
Package / Case6-DIP
PackagingTube
Number of Circuits1 - Single
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names H11G1M
H11G1M



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