H11G1

Current Transfer Ratio :
Maximum Collector Current :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Packaging : Bulk
Input Type : DC
Isolation Voltage : 5300 Vrms
Maximum Collector Emitter Saturation Voltage : 1 V
Package / Case : PDIP-6
Maximum Collector Emitter Voltage : 100 V
Maximum Power Dissipation : 260 mW


Features:

• High B_VCEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
• High sensitivity to low input current
Minimum 500 percent CTR at I_F = 1 mA
• Low leakage current at elevated temperature (maximum 100 A at 80°C)
• Underwriters Laboratory (UL) recognized File# E90700




Application

• CMOS logic interface
• Telephone ring detector
• Low input TTL interface
• Power supply isolation
• Replace pulse transformer




Pinout






Specifications

Parameter	Symbol	Value	Units
TOTAL DEVICE Storage Temperature	TSTG	-55 to +150
Operating Temperature	TOPR	-55 to +100
Lead Solder Temperature	TSOL	260 for 10 sec
Total Device Power Dissipation @ TA = 25	PD	260	mW
Derate above 25		3.5	mW/
Input-Output Isolation Voltage	VISO	5300	Vac(rms)
EMITTER Forward Input Current	IF	60	mA
Reverse Input Voltage	VR	6.0	V
Forward Current - Peak (1s pulse, 300pps)	IF(pk)	3.0	A
LED Power Dissipation @ TA = 25	PD	100	mW
Derate above 25		1.8	mW/
DETECTOR Collector-Emitter Voltage H11G1	VCEO	100	V
H11G2		80
H11G3		55
Detector Power Dissipation @ TA = 25	PD	200	mW
Derate above 25		2.67	mW/

Description

The H11G1 is designed as one kind of high voltage photodarlington optocoupler device that has a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor.

Features of the H11G1 are:(1)High BV CEO: Minimum 100V for H11G2M; (2)High sensitivity to low input current (Min. 500% CTR at I F = 1mA); (3)Low leakage current at elevated temperature (Max. 100A at 80°C); (4)Laboratory. And this device can be used in (1)CMOS logic interface; (2)Telephone ring detector; (3)Low input TTL interface; (4)Power supply isolation; (5)Replace pulse transformer applications.

The absolute maximum ratings of the H11G1 can be summarized as:(1)Storage Temperature: -55 to +150 °C;(2)Operating Temperature: -55 to +100 °C;(3)Lead Solder Temperature: 260 for 10 sec °C;(4)Total Device Power Dissipation @ 25°C: 260 mW;(5)Continuous Forward Current: 60 mA;(6)Reverse Voltage: 6 V;(7)Forward Current - Peak (1 s pulse, 300 pps): 3.0 A;(8)LED Power Dissipation 25°C Ambient: 100 mW;(9)Derate Linearly From 25°C: 100 mW/°C;(10)Detector Power Dissipation @ 25°C: 1.8 mW.etc. If you want to know more information about H11G1, please download the datasheet in www.seekic.com or www.chinaicmart.com .