Features: • Higher Current Rating• Lower RDS(on)• Lower Capacitances• Lower Total Gate Charge• Tighter VSD Specifications• Avalanche Energy SpecifiedSpecifications SYMBOL PARAMETER Value Unit ID Drain to Current (Continuous) 5 mA IDM Drain to C...
H05N60: Features: • Higher Current Rating• Lower RDS(on)• Lower Capacitances• Lower Total Gate Charge• Tighter VSD Specifications• Avalanche Energy SpecifiedSpecification...
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SYMBOL | PARAMETER | Value | Unit |
ID | Drain to Current (Continuous) | 5 | mA |
IDM | Drain to Current (Pulsed) | 20 | mA |
VGS | Gate-to-Source Voltage (Continue) | ±30 | mA |
PD | Total Power Dissipation (TC=25) H05N60E (TO-220AB) H05N60F (TO-220FP) |
75 35 |
mW |
Derate above 25 H05N60E (TO-220AB) H05N60F (TO-220FP) |
0.56 0.2 | ||
Tj,Tstg | Storage Temperature | -55 to +150 | |
EAS | 250 | mJ | |
TL | Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) |
260 |
This advanced high voltage MOSFET H05N60 is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. H05N60 is designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.