Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter Value Units VDSS Drain-Source Voltage 500 V ID Drain to Current (Continuou...
H05N50: Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter ...
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Symbol |
Parameter |
Value |
Units |
VDSS |
Drain-Source Voltage |
500 |
V |
ID |
Drain to Current (Continuous) |
5 |
A |
IDM |
Drain to Current (Pulsed) (*1) |
20 |
A |
VGS |
Gate-to-Source Voltage (Continue) |
±30 |
V |
PD |
Total Power Dissipation |
W | |
TO-220AB |
80 | ||
TO-220FP |
38 | ||
Derate above 25°C |
W/°C | ||
TO-220AB |
0.59 | ||
TO-220FP |
0.3 | ||
EAS |
Single Pulse Avalanche Energy (*2) |
300 |
mJ |
IAR |
Avalanche Current (*1) |
5 |
A |
EAR |
Repetitive Avalanche Energy (*1) |
7.4 |
mJ |
dv/dt |
Peak Diode Recovery (*3) |
5 |
V/ns |
Tj |
Operating Temperature Range |
-55 to 150 |
°C |
Tstg |
Storage Temperature Range |
-55 to 150 |
°C |
TL |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
300 |
°C |
This N - Channel MOSFETs H05N50 provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.