Features: • 1A, 600V, R DS(on)=12@VGS=10V• Low Gate Charge 15nC(Typ.)• Low Crss 4pF(Typ.)• Fast Switching• Improved dv/dt CapabilitySpecifications Symbol Parameter H01N60SI / H01N60SJ Units VDSS Drain-Source Voltage 600 V ID Drain...
H01N60S: Features: • 1A, 600V, R DS(on)=12@VGS=10V• Low Gate Charge 15nC(Typ.)• Low Crss 4pF(Typ.)• Fast Switching• Improved dv/dt CapabilitySpecifications Symbol Para...
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Symbol |
Parameter |
H01N60SI / H01N60SJ |
Units |
VDSS |
Drain-Source Voltage |
600 |
V |
ID |
Drain Current (Continuous TC=25°C) |
1 |
A |
Drain Current (Continuous TC=100°C) |
0.6 |
A | |
IDM |
Drain Current (Pulsed) *1 |
4 |
A |
VGS |
Gate-Source Voltage |
±30 |
V |
EAS |
Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25, Starting TJ=25°C) |
50 |
mJ |
IAR |
Avalanche Current *1 |
1 |
A |
EAR |
Repetitive Avalanche Energy |
2.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt *2 |
4.5 |
V/nS |
VGS |
Gate-to-Source Voltage (Continue) |
±20 |
V |
PD |
Total Power Dissipation (TA=25°C) |
2.5 |
W |
Total Power Dissipation (TC=25°C) |
28 |
W | |
Derate above 25°C |
0.22 |
W/°C | |
Tj, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
TL |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds |
300 |
°C |
This high voltage MOSFET H01N60S uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. H01N60S is designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, H01N60S is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.