Features: • 1A, 600V, RDS(on) =8@VGS=10V• Low Gate Charge 15nC(Typ.)• Low Crss 4pF(Typ.)• Fast Switching• Improved dv/dt CapabilitySpecifications Symbol Parameter H01N60I / H01N60J Units VDSSIDIDMVGSEASIAREARdv/dtVGSPDTj, TstgTL Drain-Source Vo...
H01N60I: Features: • 1A, 600V, RDS(on) =8@VGS=10V• Low Gate Charge 15nC(Typ.)• Low Crss 4pF(Typ.)• Fast Switching• Improved dv/dt CapabilitySpecifications Symbol Param...
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Symbol |
Parameter |
H01N60I / H01N60J |
Units |
VDSS ID IDM VGS EAS IAR EAR dv/dt VGS PD Tj, Tstg TL |
Drain-Source Voltage Drain Current (Continuous TC=25) Drain Current (Continuous TC=100) Drain Current (Pulsed) *1 Gate-Source Voltage Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25, Starting TJ=25°C) Avalanche Current *1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Gate-to-Source Voltage (Continue) Total Power Dissipation (TA=25) Total Power Dissipation (TC=25) Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds |
600 1 0.6 4 ±30 50 1 2.8 4.5 ±20 2.5 28 0.22 -55 to +150 300 |
V A A A V mJ A mJ V/nS V W W W/°C °C °C |
This high voltage MOSFET H01N60I uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, H01N60I is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, H01N60I is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.