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GT60M323(Q)

IGBT Transistors IGBT, 900V, 60A

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SeekIC No. : 00143664 Detail

GT60M323(Q): IGBT Transistors IGBT, 900V, 60A

GT60M323(Q) Data Sheet

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Part Number:
GT60M323(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :


Parameters:

Technical/Catalog InformationGT60M323(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A
Power - Max200W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT60M323 Q
GT60M323Q



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