Features: `The 4th generation`Enhancement-mode`Fast Switching(FS) :Operating frequency up to 150kHz(Reference)`High speed :tf=0.05s(typ.)`Low switching loss :Eon=0.12mJ(typ.) :Eoff=0.10mJ(typ.)`Low saturation voltage :VCE(sat)=2.0V(typ.)`FRD included between emitter and collectorSpecifications ...
GT5J321: Features: `The 4th generation`Enhancement-mode`Fast Switching(FS) :Operating frequency up to 150kHz(Reference)`High speed :tf=0.05s(typ.)`Low switching loss :Eon=0.12mJ(typ.) :Eoff=0.10mJ(typ.)`Low ...
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Characteristic |
Symbol |
Ratings |
Unit | |
Collector-emitter voltage |
VCES |
600 |
V | |
Gate-emitter voltage |
VGES |
±20 |
V | |
Collector current | DC |
IC |
5 |
A |
1ms |
ICP |
10 | ||
Emitter-collector forward current | DC |
IF |
5 |
A |
1ms |
IFM |
10 | ||
Collector power dissipation(Tc=25) |
PC |
28 |
W | |
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tstg |
-55~150 |