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GT5J301

Features: * Third-generation IGBT* Enhancement mode type* High speed : tf = 0.30s (Max.) (IC = 5A)* Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)* FRD included between emitter and collectorSpecifications Item Symbol Ratings Unit Collector to base voltage VCES ...

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GT5J301: Features: * Third-generation IGBT* Enhancement mode type* High speed : tf = 0.30s (Max.) (IC = 5A)* Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)* FRD included between emitter and colle...

GT5J301 Data Sheet

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Part Number:
GT5J301
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/11/23

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Product Details

Description



Features:

* Third-generation IGBT
* Enhancement mode type
* High speed : tf = 0.30s (Max.) (IC = 5A)
* Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)
* FRD included between emitter and collector


Specifications

Item
Symbol
Ratings
Unit
Collector to base voltage
VCES
600
V
Collector to emitter voltage
VGES
±20
V
Drain Current DC
IC
5
A
1ms
ICP
10
A
Emitter−Collector Forward
Current		 DC
IF
5
A
1ms
IFM
10
A
Collector Power Dissipation Tc=25
PC
28
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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