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Features: * Third-generation IGBT* Enhancement mode type* High speed : tf = 0.30s (Max.) (IC = 5A)* Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)* FRD included between emitter and collectorSpecifications Item Symbol Ratings Unit Collector to base voltage VCES ...

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SeekIC No. : 004357052 Detail

GT5J301: Features: * Third-generation IGBT* Enhancement mode type* High speed : tf = 0.30s (Max.) (IC = 5A)* Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)* FRD included between emitter and colle...

GT5J301 Data Sheet

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Part Number:: GT5J301
Supply Ability:: 5000

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Product Details

Description

Features:

* Third-generation IGBT
* Enhancement mode type
* High speed : tf = 0.30s (Max.) (IC = 5A)
* Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)
* FRD included between emitter and collector

Specifications

Item		Symbol	Ratings	Unit
Collector to base voltage		V_CES	600	V
Collector to emitter voltage		V_GES	±20	V
Drain Current	DC	I_C	5	A
Drain Current	1ms	I_CP	10	A
Emitter−Collector Forward Current	DC	I_F	5	A
Emitter−Collector Forward Current	1ms	I_FM	10	A
Collector Power Dissipation Tc=25		P_C	28	W
Junction temperature		Tj	150
Storage temperature		Tstg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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GT5J301

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